Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTX550N055T2

IXTX550N055T2

For Reference Only

Part Number IXTX550N055T2
PNEDA Part # IXTX550N055T2
Description MOSFET N-CH 55V 550A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,012
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTX550N055T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTX550N055T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTX550N055T2, IXTX550N055T2 Datasheet (Total Pages: 6, Size: 183.56 KB)
PDFIXTK550N055T2 Datasheet Cover
IXTK550N055T2 Datasheet Page 2 IXTK550N055T2 Datasheet Page 3 IXTK550N055T2 Datasheet Page 4 IXTK550N055T2 Datasheet Page 5 IXTK550N055T2 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTX550N055T2 Datasheet
  • where to find IXTX550N055T2
  • IXYS

  • IXYS IXTX550N055T2
  • IXTX550N055T2 PDF Datasheet
  • IXTX550N055T2 Stock

  • IXTX550N055T2 Pinout
  • Datasheet IXTX550N055T2
  • IXTX550N055T2 Supplier

  • IXYS Distributor
  • IXTX550N055T2 Price
  • IXTX550N055T2 Distributor

IXTX550N055T2 Specifications

ManufacturerIXYS
SeriesFRFET®, SupreMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C550A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs595nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds40000pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

The Products You May Be Interested In

FDP020N06B-F102

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

268nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

20930pF @ 30V

FET Feature

-

Power Dissipation (Max)

333W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

NTD25P03L1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

80mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1260pF @ 25V

FET Feature

-

Power Dissipation (Max)

75W (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IPC90R800C3X1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

STP5N120

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 2.3A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

AOTF16N50

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

370mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2297pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3F

Package / Case

TO-220-3 Full Pack

Recently Sold

MX25U3235FM2I-10G

MX25U3235FM2I-10G

Macronix

IC FLASH 32M SPI 104MHZ 8SOP

ATMEGA328P-AU

ATMEGA328P-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

LM258DT

LM258DT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

EVQ-P7C01P

EVQ-P7C01P

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.05A 12V

24LC256-I/ST

24LC256-I/ST

Microchip Technology

IC EEPROM 256K I2C 8TSSOP

XC6SLX9-2TQG144C

XC6SLX9-2TQG144C

Xilinx

IC FPGA 102 I/O 144TQFP

PS2501L-4-A

PS2501L-4-A

CEL

OPTOISOLTR 5KV 4CH TRANS 16-SMD

4610X-101-103LF

4610X-101-103LF

Bourns

RES ARRAY 9 RES 10K OHM 10SIP

SML-310MTT86

SML-310MTT86

Rohm Semiconductor

LED GREEN CLEAR 0603 SMD

BC184B

BC184B

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

MT29F128G08CFABAWP:B

MT29F128G08CFABAWP:B

Micron Technology Inc.

IC FLASH 128G PARALLEL 48TSOP

SHT30-ARP-B

SHT30-ARP-B

Sensirion AG

SENSOR HUMID/TEMP 5V ANLG 3% SMD