IXTY12N06T
For Reference Only
| Part Number | IXTY12N06T |
| PNEDA Part # | IXTY12N06T |
| Description | MOSFET N-CH 60V 12A TO-252 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 3,400 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXTY12N06T Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXTY12N06T |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXTY12N06T Datasheet
- where to find IXTY12N06T
- IXYS
- IXYS IXTY12N06T
- IXTY12N06T PDF Datasheet
- IXTY12N06T Stock
- IXTY12N06T Pinout
- Datasheet IXTY12N06T
- IXTY12N06T Supplier
- IXYS Distributor
- IXTY12N06T Price
- IXTY12N06T Distributor
IXTY12N06T Specifications
| Manufacturer | IXYS |
| Series | TrenchMV™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 256pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 88A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.4mOhm @ 21A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 60V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 250mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs 13.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 420pF @ 30V FET Feature - Power Dissipation (Max) 1.8W (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223 Package / Case TO-261-3 |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 780mOhm @ 3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 320pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 150W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 660mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 100V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (5x6) HV Package / Case 8-PowerVDFN |
