Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTY18P10T

IXTY18P10T

For Reference Only

Part Number IXTY18P10T
PNEDA Part # IXTY18P10T
Description MOSFET P-CH 100V 18A TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY18P10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY18P10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTY18P10T Datasheet
  • where to find IXTY18P10T
  • IXYS

  • IXYS IXTY18P10T
  • IXTY18P10T PDF Datasheet
  • IXTY18P10T Stock

  • IXTY18P10T Pinout
  • Datasheet IXTY18P10T
  • IXTY18P10T Supplier

  • IXYS Distributor
  • IXTY18P10T Price
  • IXTY18P10T Distributor

IXTY18P10T Specifications

ManufacturerIXYS
SeriesTrenchP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs120mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds2100pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8400pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

STW17N62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

15.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

94nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

SFT1350-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

19A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

59mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 23W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TP-FA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STD3NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 1.65A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

188pF @ 50V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AOTF3N80

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.8Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3F

Package / Case

TO-220-3 Full Pack

Recently Sold

LTC1726IS8-2.5#PBF

LTC1726IS8-2.5#PBF

Linear Technology/Analog Devices

IC TRPL SPLY MONITOR 2.5V 8-SOIC

ARF444

ARF444

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

X9C104SI

X9C104SI

Renesas Electronics America Inc.

IC DGTL POT 100KOHM 100TAP 8SOIC

MCP6042-I/SN

MCP6042-I/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

ISL4221EIRZ

ISL4221EIRZ

Renesas Electronics America Inc.

IC TRANSCEIVER FULL 1/1 16QFN

74HC4538D

74HC4538D

Toshiba Semiconductor and Storage

X34 PB-F 74HC CMOS LOGIC IC SERI

ADM211ARSZ

ADM211ARSZ

Analog Devices

IC TRANSCEIVER FULL 4/5 28SSOP

MC33161DMR2G

MC33161DMR2G

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8MICRO

BYW80-200G

BYW80-200G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220-2

L9678PTR

L9678PTR

STMicroelectronics

IC SBC FOR AIRBAG 64LQFP

MAX3221EAE

MAX3221EAE

Maxim Integrated

IC TRANSCEIVER FULL 1/1 16SSOP

HCPL-0201-500E

HCPL-0201-500E

Broadcom

OPTOISO 3.75KV PUSH PULL 8SO