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IXTY1N100P

IXTY1N100P

For Reference Only

Part Number IXTY1N100P
PNEDA Part # IXTY1N100P
Description MOSFET N-CH 1000V 1A TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,820
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY1N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY1N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTY1N100P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs15.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds331pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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