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IXTY1N80P

IXTY1N80P

For Reference Only

Part Number IXTY1N80P
PNEDA Part # IXTY1N80P
Description MOSFET N-CH 800V 1A TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,322
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY1N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY1N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTY1N80P, IXTY1N80P Datasheet (Total Pages: 5, Size: 161.96 KB)
PDFIXTP1N80P Datasheet Cover
IXTP1N80P Datasheet Page 2 IXTP1N80P Datasheet Page 3 IXTP1N80P Datasheet Page 4 IXTP1N80P Datasheet Page 5

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IXTY1N80P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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