Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTY1R4N120PHV

IXTY1R4N120PHV

For Reference Only

Part Number IXTY1R4N120PHV
PNEDA Part # IXTY1R4N120PHV
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,964
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY1R4N120PHV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY1R4N120PHV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTY1R4N120PHV Datasheet
  • where to find IXTY1R4N120PHV
  • IXYS

  • IXYS IXTY1R4N120PHV
  • IXTY1R4N120PHV PDF Datasheet
  • IXTY1R4N120PHV Stock

  • IXTY1R4N120PHV Pinout
  • Datasheet IXTY1R4N120PHV
  • IXTY1R4N120PHV Supplier

  • IXYS Distributor
  • IXTY1R4N120PHV Price
  • IXTY1R4N120PHV Distributor

IXTY1R4N120PHV Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs24.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds666pF @ 25V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPD380P06NMATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

38mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 1.7mA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 30V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-313

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPI45N06S4L08AKSA3

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

BSM400C12P3G202

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

400A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

5.6V @ 106.8mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

17000pF @ 10V

FET Feature

-

Power Dissipation (Max)

1570W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

Module

Package / Case

Module

NP90N03VLG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7500pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 105W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

BUK9Y4R8-60E,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

4.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7853pF @ 25V

FET Feature

-

Power Dissipation (Max)

238W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Recently Sold

BAT54CWT1G

BAT54CWT1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT323

CY62126EV30LL-45ZSXI

CY62126EV30LL-45ZSXI

Cypress Semiconductor

IC SRAM 1M PARALLEL 44TSOP II

FMMT625TA

FMMT625TA

Diodes Incorporated

TRANS NPN 150V 1A SOT23-3

D45VH10G

D45VH10G

ON Semiconductor

TRANS PNP 80V 15A TO220AB

FA-20H 16.0000MF10Z-AJ0

FA-20H 16.0000MF10Z-AJ0

EPSON

CRYSTAL 16.0000MHZ 8PF SMD

BZV49-C18,115

BZV49-C18,115

Nexperia

DIODE ZENER 18V 1W SOT89

LTC6993IS6-1#TRMPBF

LTC6993IS6-1#TRMPBF

Linear Technology/Analog Devices

IC MONO MULTIVIBRATOR TSOT23-6

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

NC7WZ04P6X

NC7WZ04P6X

ON Semiconductor

IC INVERTER 2CH 2-INP SC70-6

SMBJ15A

SMBJ15A

Microsemi

TVS DIODE 15V 24.4V DO214AA

MBRS340T3G

MBRS340T3G

ON Semiconductor

DIODE SCHOTTKY 40V 4A SMC

MAX3232ESE+

MAX3232ESE+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO