Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTY1R4N60P

IXTY1R4N60P

For Reference Only

Part Number IXTY1R4N60P
PNEDA Part # IXTY1R4N60P
Description MOSFET N-CH 600V 1.4A D-PAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY1R4N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY1R4N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTY1R4N60P, IXTY1R4N60P Datasheet (Total Pages: 4, Size: 152.02 KB)
PDFIXTU1R4N60P Datasheet Cover
IXTU1R4N60P Datasheet Page 2 IXTU1R4N60P Datasheet Page 3 IXTU1R4N60P Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTY1R4N60P Datasheet
  • where to find IXTY1R4N60P
  • IXYS

  • IXYS IXTY1R4N60P
  • IXTY1R4N60P PDF Datasheet
  • IXTY1R4N60P Stock

  • IXTY1R4N60P Pinout
  • Datasheet IXTY1R4N60P
  • IXTY1R4N60P Supplier

  • IXYS Distributor
  • IXTY1R4N60P Price
  • IXTY1R4N60P Distributor

IXTY1R4N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

TK16A45D(STA4,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

16A

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

270mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

FDT459N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

365pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA

BSS131L6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

110mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 56µA

Gate Charge (Qg) (Max) @ Vgs

3.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

77pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

AO4407AL

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 20V

Rds On (Max) @ Id, Vgs

11mOhm @ 12A, 20V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

AON6428

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 15V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads

Recently Sold

LM393DR

LM393DR

Rohm Semiconductor

IC COMPARATOR DUAL 0.8MA 8-SOIC

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917

MF-MSMF075-2

MF-MSMF075-2

Bourns

PTC RESET FUSE 13.2V 750MA 1812

HMC7044LP10BE

HMC7044LP10BE

Analog Devices

IC JITTER ATTENUATOR 68LFCSP

ISL21010CFH325Z-TK

ISL21010CFH325Z-TK

Renesas Electronics America Inc.

IC VREF SERIES 2.5V SOT23-3

ECMF02-4CMX8

ECMF02-4CMX8

STMicroelectronics

COMMON MODE CHOKE 2LN SMD ESD

LM2902N

LM2902N

ON Semiconductor

IC OPAMP GP 4 CIRCUIT 14DIP

ADM3260ARSZ

ADM3260ARSZ

Analog Devices

DGTL ISO 2.5KV 2CH I2C 20SSOP

1N4148WS

1N4148WS

ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

DHRB34C102M2FB

DHRB34C102M2FB

Murata

CAP CER 1000PF 15KV RADIAL

IRLML6302TRPBF

IRLML6302TRPBF

Infineon Technologies

MOSFET P-CH 20V 780MA SOT-23