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IXTY1R6N50P

IXTY1R6N50P

For Reference Only

Part Number IXTY1R6N50P
PNEDA Part # IXTY1R6N50P
Description MOSFET N-CH 500V 1.6A DPAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY1R6N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY1R6N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTY1R6N50P, IXTY1R6N50P Datasheet (Total Pages: 5, Size: 777.81 KB)
PDFIXTP1R6N50P Datasheet Cover
IXTP1R6N50P Datasheet Page 2 IXTP1R6N50P Datasheet Page 3 IXTP1R6N50P Datasheet Page 4 IXTP1R6N50P Datasheet Page 5

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IXTY1R6N50P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs3.9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)43W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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