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IXTY50N085T

IXTY50N085T

For Reference Only

Part Number IXTY50N085T
PNEDA Part # IXTY50N085T
Description MOSFET N-CH 85V 50A TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,358
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY50N085T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY50N085T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTY50N085T, IXTY50N085T Datasheet (Total Pages: 5, Size: 171.13 KB)
PDFIXTY50N085T Datasheet Cover
IXTY50N085T Datasheet Page 2 IXTY50N085T Datasheet Page 3 IXTY50N085T Datasheet Page 4 IXTY50N085T Datasheet Page 5

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IXTY50N085T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1460pF @ 25V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Rds On (Max) @ Id, Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Vgs(th) (Max) @ Id

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id

1.6V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 5V

Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Operating Temperature

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Package / Case

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Vishay Siliconix

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Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 18.9A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31.5nC @ 4.5V

Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

2610pF @ 15V

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Power Dissipation (Max)

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Operating Temperature

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Vishay Siliconix

Manufacturer

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FET Type

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Technology

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

3.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

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Power Dissipation (Max)

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Operating Temperature

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Package / Case

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