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IXXH100N60B3

IXXH100N60B3

For Reference Only

Part Number IXXH100N60B3
PNEDA Part # IXXH100N60B3
Description IGBT 600V 220A 830W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXH100N60B3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXH100N60B3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXXH100N60B3, IXXH100N60B3 Datasheet (Total Pages: 6, Size: 170.23 KB)
PDFIXXH100N60B3 Datasheet Cover
IXXH100N60B3 Datasheet Page 2 IXXH100N60B3 Datasheet Page 3 IXXH100N60B3 Datasheet Page 4 IXXH100N60B3 Datasheet Page 5 IXXH100N60B3 Datasheet Page 6

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IXXH100N60B3 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)220A
Current - Collector Pulsed (Icm)480A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 70A
Power - Max830W
Switching Energy1.9mJ (on), 2mJ (off)
Input TypeStandard
Gate Charge143nC
Td (on/off) @ 25°C30ns/120ns
Test Condition360V, 70A, 2Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXXH)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

480V, 100A, 2.4Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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TO-264-3, TO-264AA

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

63nC

Td (on/off) @ 25°C

28ns/400ns

Test Condition

800V, 20A, 47Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

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Surface Mount

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Supplier Device Package

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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