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IXXH75N60B3D1

IXXH75N60B3D1

For Reference Only

Part Number IXXH75N60B3D1
PNEDA Part # IXXH75N60B3D1
Description IGBT 600V 160A 750W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,046
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXH75N60B3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXH75N60B3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXH75N60B3D1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)160A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 60A
Power - Max750W
Switching Energy1.7mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge107nC
Td (on/off) @ 25°C35ns/118ns
Test Condition400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr)25ns
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXXH)

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Package / Case

ISOPLUS247™

Supplier Device Package

ISOPLUS247™

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

64A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 32A

Power - Max

300W

Switching Energy

2.2mJ (off)

Input Type

Standard

Gate Charge

89nC

Td (on/off) @ 25°C

20ns/260ns

Test Condition

720V, 32A, 5Ohm, 15V

Reverse Recovery Time (trr)

190ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IRG4RC10STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Power - Max

38W

Switching Energy

140µJ (on), 2.58mJ (off)

Input Type

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Gate Charge

15nC

Td (on/off) @ 25°C

25ns/630ns

Test Condition

480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Power - Max

543W

Switching Energy

385µJ (on), 350µJ (off)

Input Type

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Gate Charge

135nC

Td (on/off) @ 25°C

20ns/64ns

Test Condition

400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

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FGA90N30DTU

ON Semiconductor

Manufacturer

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Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

220A

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 20A

Power - Max

219W

Switching Energy

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Input Type

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Gate Charge

87nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

21ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

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