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IXXK200N60C3

IXXK200N60C3

For Reference Only

Part Number IXXK200N60C3
PNEDA Part # IXXK200N60C3
Description IGBT 600V 340A 1630W TO264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,362
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXK200N60C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXK200N60C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXXK200N60C3, IXXK200N60C3 Datasheet (Total Pages: 6, Size: 205.76 KB)
PDFIXXK200N60C3 Datasheet Cover
IXXK200N60C3 Datasheet Page 2 IXXK200N60C3 Datasheet Page 3 IXXK200N60C3 Datasheet Page 4 IXXK200N60C3 Datasheet Page 5 IXXK200N60C3 Datasheet Page 6

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IXXK200N60C3 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)340A
Current - Collector Pulsed (Icm)900A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
Power - Max1630W
Switching Energy3mJ (on), 1.7mJ (off)
Input TypeStandard
Gate Charge315nC
Td (on/off) @ 25°C47ns/125ns
Test Condition360V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXXK)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr)

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-40°C ~ 175°C (TJ)

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Through Hole

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

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Power - Max

139W

Switching Energy

150µJ (on), 50µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

8ns/52.2ns

Test Condition

400V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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