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IXXQ30N60B3M

IXXQ30N60B3M

For Reference Only

Part Number IXXQ30N60B3M
PNEDA Part # IXXQ30N60B3M
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXQ30N60B3M Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXQ30N60B3M
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXQ30N60B3M Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)33A
Current - Collector Pulsed (Icm)140A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 24A
Power - Max90W
Switching Energy550µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge39nC
Td (on/off) @ 25°C23ns/150ns
Test Condition400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)36ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-3P

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX4™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

630A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 110A

Power - Max

880W

Switching Energy

2.2mJ (on), 1.05mJ (off)

Input Type

Standard

Gate Charge

183nC

Td (on/off) @ 25°C

38ns/156ns

Test Condition

400V, 55A, 2Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

IRGI4086PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

25A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.96V @ 15V, 120A

Power - Max

43W

Switching Energy

-

Input Type

Standard

Gate Charge

65nC

Td (on/off) @ 25°C

36ns/112ns

Test Condition

196V, 25A, 10Ohm

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220AB Full-Pak

IRG8P60N120KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power - Max

420W

Switching Energy

2.8mJ (on), 2.3mJ (off)

Input Type

Standard

Gate Charge

345nC

Td (on/off) @ 25°C

40ns/240ns

Test Condition

600V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

210ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IXYP8N90C3

IXYS

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 8A

Power - Max

125W

Switching Energy

460µJ (on), 180µJ (off)

Input Type

Standard

Gate Charge

13.3nC

Td (on/off) @ 25°C

16ns/40ns

Test Condition

450V, 8A, 30Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

AOTF15B60D

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

Alpha IGBT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 15A

Power - Max

50W

Switching Energy

420µJ (on), 110µJ (off)

Input Type

Standard

Gate Charge

25.4nC

Td (on/off) @ 25°C

21ns/73ns

Test Condition

400V, 15A, 20Ohm, 15V

Reverse Recovery Time (trr)

196ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220-3F

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