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IXXX140N65B4H1

IXXX140N65B4H1

For Reference Only

Part Number IXXX140N65B4H1
PNEDA Part # IXXX140N65B4H1
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,114
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXX140N65B4H1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXX140N65B4H1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXX140N65B4H1 Specifications

ManufacturerIXYS
SeriesXPT™, GenX4™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)340A
Current - Collector Pulsed (Icm)840A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 120A
Power - Max1200W
Switching Energy5.75mJ (on), 2.67mJ (off)
Input TypeStandard
Gate Charge250nC
Td (on/off) @ 25°C54ns/270ns
Test Condition400V, 100A, 4.7Ohm, 15V
Reverse Recovery Time (trr)105ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Power - Max

125W

Switching Energy

1.55mJ (on), 1.7mJ (off)

Input Type

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Gate Charge

48nC

Td (on/off) @ 25°C

-

Test Condition

600V, 15A, 56Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

7A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 3A

Power - Max

24W

Switching Energy

55µJ (on), 85µJ (off)

Input Type

Standard

Gate Charge

19nC

Td (on/off) @ 25°C

17ns/72ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

23.5ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Power - Max

555W

Switching Energy

2.7mJ (on), 1.1mJ (off)

Input Type

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Gate Charge

370nC

Td (on/off) @ 25°C

40ns/475ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

65ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

IXYS

Series

HiPerFAST™, Lightspeed™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Power - Max

100W

Switching Energy

90µJ (off)

Input Type

Standard

Gate Charge

32nC

Td (on/off) @ 25°C

20ns/60ns

Test Condition

480V, 12A, 18Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

STGWT60H65FB

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 60A

Power - Max

375W

Switching Energy

1.09mJ (on), 626µJ (off)

Input Type

Standard

Gate Charge

306nC

Td (on/off) @ 25°C

51ns/160ns

Test Condition

400V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

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