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IXYA20N65C3D1

IXYA20N65C3D1

For Reference Only

Part Number IXYA20N65C3D1
PNEDA Part # IXYA20N65C3D1
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,402
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYA20N65C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYA20N65C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYA20N65C3D1, IXYA20N65C3D1 Datasheet (Total Pages: 7, Size: 242.63 KB)
PDFIXYA20N65C3D1 Datasheet Cover
IXYA20N65C3D1 Datasheet Page 2 IXYA20N65C3D1 Datasheet Page 3 IXYA20N65C3D1 Datasheet Page 4 IXYA20N65C3D1 Datasheet Page 5 IXYA20N65C3D1 Datasheet Page 6 IXYA20N65C3D1 Datasheet Page 7

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IXYA20N65C3D1 Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)105A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Power - Max200W
Switching Energy430µJ (on), 650µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C19ns/80ns
Test Condition400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)34ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

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ON Semiconductor

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.1mJ (on), 1.2mJ (off)

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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