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IXYH10N170C

IXYH10N170C

For Reference Only

Part Number IXYH10N170C
PNEDA Part # IXYH10N170C
Description IGBT 1.7KV 36A TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,108
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH10N170C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH10N170C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYH10N170C, IXYH10N170C Datasheet (Total Pages: 6, Size: 203.63 KB)
PDFIXYH10N170C Datasheet Cover
IXYH10N170C Datasheet Page 2 IXYH10N170C Datasheet Page 3 IXYH10N170C Datasheet Page 4 IXYH10N170C Datasheet Page 5 IXYH10N170C Datasheet Page 6

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IXYH10N170C Specifications

ManufacturerIXYS
SeriesXPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)36A
Current - Collector Pulsed (Icm)84A
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 10A
Power - Max280W
Switching Energy1.4mJ (on), 700µJ (off)
Input TypeStandard
Gate Charge46nC
Td (on/off) @ 25°C14ns/130ns
Test Condition850V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)17ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXYH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

350nC

Td (on/off) @ 25°C

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Test Condition

600V, 80A, 2Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 32A

Power - Max

350W

Switching Energy

11mJ (off)

Input Type

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Gate Charge

155nC

Td (on/off) @ 25°C

45ns/270ns

Test Condition

1020V, 32A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

FGB20N6S2

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 7A

Power - Max

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Switching Energy

25µJ (on), 58µJ (off)

Input Type

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Gate Charge

30nC

Td (on/off) @ 25°C

7.7ns/87ns

Test Condition

390V, 7A, 25Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

IRGB4607DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 4A

Power - Max

58W

Switching Energy

140µJ (on), 62µJ (off)

Input Type

Standard

Gate Charge

9nC

Td (on/off) @ 25°C

27ns/120ns

Test Condition

400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr)

48ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

STGFW20H65FB

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Power - Max

52W

Switching Energy

77µJ (on), 170µJ (off)

Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

30ns/139ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-3PFM, SC-93-3

Supplier Device Package

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