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IXYH10N170C

IXYH10N170C

For Reference Only

Part Number IXYH10N170C
PNEDA Part # IXYH10N170C
Description IGBT 1.7KV 36A TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,108
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH10N170C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH10N170C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYH10N170C, IXYH10N170C Datasheet (Total Pages: 6, Size: 203.63 KB)
PDFIXYH10N170C Datasheet Cover
IXYH10N170C Datasheet Page 2 IXYH10N170C Datasheet Page 3 IXYH10N170C Datasheet Page 4 IXYH10N170C Datasheet Page 5 IXYH10N170C Datasheet Page 6

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IXYH10N170C Specifications

ManufacturerIXYS
SeriesXPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)36A
Current - Collector Pulsed (Icm)84A
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 10A
Power - Max280W
Switching Energy1.4mJ (on), 700µJ (off)
Input TypeStandard
Gate Charge46nC
Td (on/off) @ 25°C14ns/130ns
Test Condition850V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)17ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXYH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

350W

Switching Energy

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Input Type

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Gate Charge

155nC

Td (on/off) @ 25°C

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Test Condition

1020V, 32A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

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Power - Max

125W

Switching Energy

25µJ (on), 58µJ (off)

Input Type

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Gate Charge

30nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

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Power - Max

52W

Switching Energy

77µJ (on), 170µJ (off)

Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

30ns/139ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3PFM, SC-93-3

Supplier Device Package

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Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

225A

Current - Collector Pulsed (Icm)

460A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 70A

Power - Max

830W

Switching Energy

1.27mJ (on), 2mJ (off)

Input Type

Standard

Gate Charge

168nC

Td (on/off) @ 25°C

29ns/150ns

Test Condition

400V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264

IXGH50N60B

IXYS

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Power - Max

300W

Switching Energy

3mJ (off)

Input Type

Standard

Gate Charge

160nC

Td (on/off) @ 25°C

50ns/150ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

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