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IXYH24N170C

IXYH24N170C

For Reference Only

Part Number IXYH24N170C
PNEDA Part # IXYH24N170C
Description IGBT 1.7KV 58A TO247-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH24N170C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH24N170C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYH24N170C, IXYH24N170C Datasheet (Total Pages: 6, Size: 215.49 KB)
PDFIXYH24N170C Datasheet Cover
IXYH24N170C Datasheet Page 2 IXYH24N170C Datasheet Page 3 IXYH24N170C Datasheet Page 4 IXYH24N170C Datasheet Page 5 IXYH24N170C Datasheet Page 6

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IXYH24N170C Specifications

ManufacturerIXYS
SeriesXPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)58A
Current - Collector Pulsed (Icm)145A
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 20A
Power - Max500W
Switching Energy4.9mJ (on), 1.95mJ (off)
Input TypeStandard
Gate Charge96nC
Td (on/off) @ 25°C12ns/160ns
Test Condition960V, 30A, 15Ohm, 15V
Reverse Recovery Time (trr)30ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 60A

Power - Max

540W

Switching Energy

1.38mJ (on), 3.5mJ (off)

Input Type

Standard

Gate Charge

230nC

Td (on/off) @ 25°C

31ns/320ns

Test Condition

480V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Power - Max

463W

Switching Energy

260µJ (on), 250µJ (off)

Input Type

Standard

Gate Charge

90nC

Td (on/off) @ 25°C

13ns/55ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

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Power - Max

-

Switching Energy

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Input Type

Standard

Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

IRG4BC30S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

34A

Current - Collector Pulsed (Icm)

68A

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 18A

Power - Max

100W

Switching Energy

260µJ (on), 3.45mJ (off)

Input Type

Standard

Gate Charge

50nC

Td (on/off) @ 25°C

22ns/540ns

Test Condition

480V, 18A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

APT100GN60LDQ4G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

229A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 100A

Power - Max

625W

Switching Energy

4.75mJ (on), 2.675mJ (off)

Input Type

Standard

Gate Charge

600nC

Td (on/off) @ 25°C

31ns/310ns

Test Condition

400V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 [L]

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