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IXYH40N65B3D1

IXYH40N65B3D1

For Reference Only

Part Number IXYH40N65B3D1
PNEDA Part # IXYH40N65B3D1
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH40N65B3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH40N65B3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYH40N65B3D1 Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)86A
Current - Collector Pulsed (Icm)195A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Power - Max300W
Switching Energy800µJ (on), 1.25mJ (off)
Input TypeStandard
Gate Charge68nC
Td (on/off) @ 25°C20ns/140ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)37ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 50A

Power - Max

460W

Switching Energy

1.42mJ (on), 3.28mJ (off)

Input Type

Standard

Gate Charge

167nC

Td (on/off) @ 25°C

26ns/268ns

Test Condition

480V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IRG7PH42UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Power - Max

385W

Switching Energy

2.11mJ (on), 1.18mJ (off)

Input Type

Standard

Gate Charge

157nC

Td (on/off) @ 25°C

25ns/229ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

STGP14NC60KD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

25A

Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 7A

Power - Max

80W

Switching Energy

82µJ (on), 155µJ (off)

Input Type

Standard

Gate Charge

34.4nC

Td (on/off) @ 25°C

22.5ns/116ns

Test Condition

390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

HGT1S7N60C3DS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

56A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 7A

Power - Max

60W

Switching Energy

165µJ (on), 600µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

-

Test Condition

480V, 7A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

ISL9V5036S3ST_SB82170

ON Semiconductor

Manufacturer

ON Semiconductor

Series

EcoSPARK®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

390V

Current - Collector (Ic) (Max)

46A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.6V @ 4V, 10A

Power - Max

250W

Switching Energy

-

Input Type

Logic

Gate Charge

32nC

Td (on/off) @ 25°C

-/10.8µs

Test Condition

300V, 1kOhm, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

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