IXYK100N65B3D1
For Reference Only
| Part Number | IXYK100N65B3D1 |
| PNEDA Part # | IXYK100N65B3D1 |
| Description | IGBT |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 7,830 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXYK100N65B3D1 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXYK100N65B3D1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IXYK100N65B3D1 Specifications
| Manufacturer | IXYS |
| Series | XPT™, GenX3™ |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 225A |
| Current - Collector Pulsed (Icm) | 460A |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 70A |
| Power - Max | 830W |
| Switching Energy | 1.27mJ (on), 2mJ (off) |
| Input Type | Standard |
| Gate Charge | 168nC |
| Td (on/off) @ 25°C | 29ns/150ns |
| Test Condition | 400V, 50A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 37ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 78A Current - Collector Pulsed (Icm) 156A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 42A Power - Max 350W Switching Energy 5.68mJ (on), 3.23mJ (off) Input Type Standard Gate Charge 410nC Td (on/off) @ 25°C 67ns/230ns Test Condition 800V, 42A, 5Ohm, 15V Reverse Recovery Time (trr) 107ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-274AA Supplier Device Package SUPER-247™ (TO-274AA) |
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