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IXYP10N65C3D1

IXYP10N65C3D1

For Reference Only

Part Number IXYP10N65C3D1
PNEDA Part # IXYP10N65C3D1
Description IGBT 650V 30A 160W TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYP10N65C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYP10N65C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYP10N65C3D1, IXYP10N65C3D1 Datasheet (Total Pages: 7, Size: 209.08 KB)
PDFIXYP10N65C3D1 Datasheet Cover
IXYP10N65C3D1 Datasheet Page 2 IXYP10N65C3D1 Datasheet Page 3 IXYP10N65C3D1 Datasheet Page 4 IXYP10N65C3D1 Datasheet Page 5 IXYP10N65C3D1 Datasheet Page 6 IXYP10N65C3D1 Datasheet Page 7

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IXYP10N65C3D1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)54A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max160W
Switching Energy240µJ (on), 110µJ (off)
Input TypeStandard
Gate Charge18nC
Td (on/off) @ 25°C20ns/77ns
Test Condition400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr)170ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

400µJ (on), 480µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

68nC

Td (on/off) @ 25°C

18ns/64ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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STGP3HF60HD

STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

7.5A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

19µJ (on), 12µJ (off)

Input Type

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Gate Charge

12nC

Td (on/off) @ 25°C

11ns/60ns

Test Condition

400V, 1.5A, 100Ohm, 15V

Reverse Recovery Time (trr)

85ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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STMicroelectronics

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Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

35A

Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 12A

Power - Max

125W

Switching Energy

165µJ (on), 255µJ (off)

Input Type

Standard

Gate Charge

55nC

Td (on/off) @ 25°C

30ns/105ns

Test Condition

480V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

STGW60H65DFB

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 60A

Power - Max

375W

Switching Energy

1.09mJ (on), 626µJ (off)

Input Type

Standard

Gate Charge

306nC

Td (on/off) @ 25°C

51ns/160ns

Test Condition

400V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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