IXYP8N90C3
For Reference Only
| Part Number | IXYP8N90C3 |
| PNEDA Part # | IXYP8N90C3 |
| Description | IGBT 900V 20A 125W TO220 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 4,320 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXYP8N90C3 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXYP8N90C3 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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IXYP8N90C3 Specifications
| Manufacturer | IXYS |
| Series | GenX3™, XPT™ |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 20A |
| Current - Collector Pulsed (Icm) | 48A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 8A |
| Power - Max | 125W |
| Switching Energy | 460µJ (on), 180µJ (off) |
| Input Type | Standard |
| Gate Charge | 13.3nC |
| Td (on/off) @ 25°C | 16ns/40ns |
| Test Condition | 450V, 8A, 30Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
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Manufacturer STMicroelectronics Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 7.5A Current - Collector Pulsed (Icm) 18A Vce(on) (Max) @ Vge, Ic 2.95V @ 15V, 1.5A Power - Max 38W Switching Energy 19µJ (on), 12µJ (off) Input Type Standard Gate Charge 12nC Td (on/off) @ 25°C 11ns/60ns Test Condition 400V, 1.5A, 100Ohm, 15V Reverse Recovery Time (trr) 85ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220 |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 63A Current - Collector Pulsed (Icm) 252A Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A Power - Max 208W Switching Energy 1.05mJ (on), 2.5mJ (off) Input Type Standard Gate Charge 162nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 60ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
Manufacturer Microsemi Corporation Series POWER MOS 8™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 78A Current - Collector Pulsed (Icm) 130A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 26A Power - Max 337W Switching Energy 409µJ (on), 258µJ (off) Input Type Standard Gate Charge 128nC Td (on/off) @ 25°C 16ns/84ns Test Condition 400V, 26A, 4.7Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
