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IXYP8N90C3D1

IXYP8N90C3D1

For Reference Only

Part Number IXYP8N90C3D1
PNEDA Part # IXYP8N90C3D1
Description IGBT 900V 20A 125W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYP8N90C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYP8N90C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYP8N90C3D1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)48A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 8A
Power - Max125W
Switching Energy460µJ (on), 180µJ (off)
Input TypeStandard
Gate Charge13.3nC
Td (on/off) @ 25°C16ns/40ns
Test Condition450V, 8A, 30Ohm, 15V
Reverse Recovery Time (trr)114ns
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

290A

Current - Collector Pulsed (Icm)

800A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 160A

Power - Max

940W

Switching Energy

3.5mJ (on), 1.3mJ (off)

Input Type

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Gate Charge

422nC

Td (on/off) @ 25°C

52ns/197ns

Test Condition

400V, 80A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 15A

Power - Max

217W

Switching Energy

1.55mJ

Input Type

Standard

Gate Charge

75nC

Td (on/off) @ 25°C

21ns/260ns

Test Condition

600V, 15A, 35Ohm, 15V

Reverse Recovery Time (trr)

260ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

283A

Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 200A

Power - Max

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Switching Energy

13mJ (on), 11mJ (off)

Input Type

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Gate Charge

1180nC

Td (on/off) @ 25°C

50ns/560ns

Test Condition

400V, 200A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IGZ75N65H5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™ 5

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

119A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Power - Max

395W

Switching Energy

680µJ (on), 430µJ (off)

Input Type

Standard

Gate Charge

166nC

Td (on/off) @ 25°C

26ns/347ns

Test Condition

400V, 37.5A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4

RGT8TM65DGC9

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

5A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

16W

Switching Energy

-

Input Type

Standard

Gate Charge

13.5nC

Td (on/off) @ 25°C

17ns/69ns

Test Condition

400V, 4A, 50Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NFM

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