IXYX100N65B3D1
For Reference Only
| Part Number | IXYX100N65B3D1 |
| PNEDA Part # | IXYX100N65B3D1 |
| Description | IGBT 650V 188A 1150W PLUS247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 4,824 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXYX100N65B3D1 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXYX100N65B3D1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IXYX100N65B3D1 Specifications
| Manufacturer | IXYS |
| Series | GenX3™, XPT™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 225A |
| Current - Collector Pulsed (Icm) | 460A |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 70A |
| Power - Max | 830W |
| Switching Energy | 1.27mJ (on), 1.37mJ (off) |
| Input Type | Standard |
| Gate Charge | 168nC |
| Td (on/off) @ 25°C | 29ns/150ns |
| Test Condition | 400V, 50A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 156ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PLUS247™-3 |
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Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 96A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A Power - Max 577W Switching Energy 2.7mJ (on), 1.6mJ (off) Input Type Standard Gate Charge 87nC Td (on/off) @ 25°C 22ns/177ns Test Condition 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 (IXYH) |
Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 330V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 24A Power - Max 114W Switching Energy - Input Type Standard Gate Charge 46nC Td (on/off) @ 25°C 24ns/89ns Test Condition 196V, 12A, 10Ohm Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 300V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 110A Power - Max 255W Switching Energy - Input Type Standard Gate Charge 132nC Td (on/off) @ 25°C 44ns/245ns Test Condition - Reverse Recovery Time (trr) 27ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
