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J109_D75Z

J109_D75Z

For Reference Only

Part Number J109_D75Z
PNEDA Part # J109_D75Z
Description JFET N-CH 25V 625MW TO92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

J109_D75Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberJ109_D75Z
CategorySemiconductorsTransistorsTransistors - JFETs
Datasheet
J109_D75Z, J109_D75Z Datasheet (Total Pages: 7, Size: 129.73 KB)
PDFJ108_D74Z Datasheet Cover
J108_D74Z Datasheet Page 2 J108_D74Z Datasheet Page 3 J108_D74Z Datasheet Page 4 J108_D74Z Datasheet Page 5 J108_D74Z Datasheet Page 6 J108_D74Z Datasheet Page 7

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J109_D75Z Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
Voltage - Breakdown (V(BR)GSS)25V
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)40mA @ 15V
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id2V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds-
Resistance - RDS(On)12 Ohms
Power - Max625mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

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J113_D75Z

ON Semiconductor

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

2mA @ 15V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

500mV @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

-

Resistance - RDS(On)

100 Ohms

Power - Max

625mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

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Panasonic Electronic Components

Manufacturer

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

600µA @ 10V

Current Drain (Id) - Max

20mA

Voltage - Cutoff (VGS off) @ Id

1.5V @ 10µA

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 10V

Resistance - RDS(On)

300 Ohms

Power - Max

300mW

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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J113_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

35V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

2mA @ 15V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

500mV @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

100 Ohms

Power - Max

625mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

PN4117A_J61Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

40V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

30µA @ 10V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

600mV @ 1nA

Input Capacitance (Ciss) (Max) @ Vds

3pF @ 10V

Resistance - RDS(On)

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Power - Max

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Operating Temperature

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Mounting Type

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Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

J109,126

NXP

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

25V

Drain to Source Voltage (Vdss)

25V

Current - Drain (Idss) @ Vds (Vgs=0)

80mA @ 15V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

2V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 10V (VGS)

Resistance - RDS(On)

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Power - Max

400mW

Operating Temperature

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Mounting Type

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Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

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