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J111_D27Z

J111_D27Z

For Reference Only

Part Number J111_D27Z
PNEDA Part # J111_D27Z
Description JFET N-CH 35V 625MW TO92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

J111_D27Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberJ111_D27Z
CategorySemiconductorsTransistorsTransistors - JFETs

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J111_D27Z Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
Voltage - Breakdown (V(BR)GSS)35V
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)20mA @ 15V
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id3V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds-
Resistance - RDS(On)30 Ohms
Power - Max625mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

10mA @ 15V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

4V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 10V (VGS)

Resistance - RDS(On)

18 Ohms

Power - Max

250mW

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

1.5mA @ 15V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

800mV @ 10nA

Input Capacitance (Ciss) (Max) @ Vds

-

Resistance - RDS(On)

300 Ohms

Power - Max

350mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

TIS75_J35Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

30V

Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

8mA @ 15V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

800mV @ 4nA

Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

350mW

Operating Temperature

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Mounting Type

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Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

JANTX2N4093UB

Microsemi

Manufacturer

Microsemi Corporation

Series

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FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

40V

Drain to Source Voltage (Vdss)

40V

Current - Drain (Idss) @ Vds (Vgs=0)

8mA @ 20V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

25V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

10mA @ 15V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

500mV @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

310mW

Operating Temperature

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Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

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