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JAN1N5811US

JAN1N5811US

For Reference Only

Part Number JAN1N5811US
PNEDA Part # JAN1N5811US
Description DIODE GEN PURP 150V 6A B-MELF
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,196
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

JAN1N5811US Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberJAN1N5811US
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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JAN1N5811US Specifications

ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/477
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)150V
Current - Average Rectified (Io)6A
Voltage - Forward (Vf) (Max) @ If875mV @ 4A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30ns
Current - Reverse Leakage @ Vr5µA @ 150V
Capacitance @ Vr, F60pF @ 10V, 1MHz
Mounting TypeSurface Mount
Package / CaseSQ-MELF, B
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C

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