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JAN2N5012

JAN2N5012

For Reference Only

Part Number JAN2N5012
PNEDA Part # JAN2N5012
Description NPN TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

JAN2N5012 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberJAN2N5012
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single

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JAN2N5012 Specifications

ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/727
Transistor TypeNPN
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)700V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 25mA, 10V
Power - Max1W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5

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