JAN2N5680
For Reference Only
| Part Number | JAN2N5680 |
| PNEDA Part # | JAN2N5680 |
| Description | NPN TRANSISTOR |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 8,712 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JAN2N5680 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JAN2N5680 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
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JAN2N5680 Specifications
| Manufacturer | Microsemi Corporation |
| Series | * |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Microsemi Corporation Series * Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1mA, 6V Power - Max 500mW Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-226AA |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) 15nA DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer STMicroelectronics Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 800V Vce Saturation (Max) @ Ib, Ic 3V @ 660mA, 2A Current - Collector Cutoff (Max) 250µA DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 400mA, 5V Power - Max 90W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A Current - Collector Cutoff (Max) 5mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 10V Power - Max 30W Frequency - Transition 20MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
