JAN2N657
For Reference Only
| Part Number | JAN2N657 |
| PNEDA Part # | JAN2N657 |
| Description | TRANS NPN 100V 0.02A |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 6,372 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 24 - May 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JAN2N657 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JAN2N657 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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JAN2N657 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5 |
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 2mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V Power - Max 900mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package LSTM |
Manufacturer Bourns Inc. Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A Current - Collector Cutoff (Max) 300µA DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 4V Power - Max 2W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220 |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Transistor Type PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V Power - Max 300mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
