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JANS2N2369AUB

JANS2N2369AUB

For Reference Only

Part Number JANS2N2369AUB
PNEDA Part # JANS2N2369AUB
Description TRANS NPN 15V SMD
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 3,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

JANS2N2369AUB Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberJANS2N2369AUB
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single

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JANS2N2369AUB Specifications

ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/317
Transistor TypeNPN
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)15V
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 1V
Power - Max360mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device PackageUB

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JANTX2N2369AU

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

-

Voltage - Collector Emitter Breakdown (Max)

15V

Vce Saturation (Max) @ Ib, Ic

450mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

400nA

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 100mA, 1V

Power - Max

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Frequency - Transition

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

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Infineon Technologies

Series

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Transistor Type

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Current - Collector (Ic) (Max)

200mA

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

400mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 1V

Power - Max

330mW

Frequency - Transition

250MHz

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

SOT-23-3

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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Transistor Type

NPN

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

160V

Vce Saturation (Max) @ Ib, Ic

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Power - Max

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Frequency - Transition

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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TB100EP

WeEn Semiconductors

Manufacturer

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Series

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Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

700V

Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

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Power - Max

2W

Frequency - Transition

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Operating Temperature

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Package / Case

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Supplier Device Package

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Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

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Power - Max

900mW

Frequency - Transition

50MHz

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

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