JANTX2N3439
For Reference Only
| Part Number | JANTX2N3439 |
| PNEDA Part # | JANTX2N3439 |
| Description | TRANS NPN 350V 1A |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,202 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JANTX2N3439 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JANTX2N3439 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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JANTX2N3439 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/368 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 350V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Power - Max | 800mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V Power - Max 330mW Frequency - Transition 250MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Microsemi Corporation Series - Transistor Type PNP Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/307 Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A, 4V Power - Max 6W Frequency - Transition - Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AA, TO-3 Supplier Device Package TO-3 |
