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JANTXV1N5417US

JANTXV1N5417US

For Reference Only

Part Number JANTXV1N5417US
PNEDA Part # JANTXV1N5417US
Description DIODE GEN PURP 200V 3A D5B
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,032
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

JANTXV1N5417US Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberJANTXV1N5417US
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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JANTXV1N5417US Specifications

ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/411
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.5V @ 9A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150ns
Current - Reverse Leakage @ Vr1µA @ 200V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseSQ-MELF, B
Supplier Device PackageD-5B
Operating Temperature - Junction-65°C ~ 175°C

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Current - Average Rectified (Io)

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Taiwan Semiconductor Corporation

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Series

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Diode Type

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Series

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Diode Type

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Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Mounting Type

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Package / Case

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Diode Type

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Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

600mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Package / Case

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Operating Temperature - Junction

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