JANTXV2N2857UB
For Reference Only
| Part Number | JANTXV2N2857UB |
| PNEDA Part # | JANTXV2N2857UB |
| Description | RF TRANS NPN 15V 0.04A UB |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,454 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JANTXV2N2857UB Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JANTXV2N2857UB |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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JANTXV2N2857UB Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Gain | 21dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Supplier Device Package | UB |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 8V Frequency - Transition 16GHz Noise Figure (dB Typ @ f) 1.2dB @ 1GHz Gain 17.5dB Power - Max 400mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V Current - Collector (Ic) (Max) 150mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-343F Supplier Device Package 4-MCPH |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 3.5dB @ 800MHz Gain - Power - Max 500mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA, 9V Current - Collector (Ic) (Max) 100mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB (SOT23) |
Manufacturer Infineon Technologies Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain 19dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA, 8V Current - Collector (Ic) (Max) 65mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
