JANTXV2N5681
For Reference Only
| Part Number | JANTXV2N5681 |
| PNEDA Part # | JANTXV2N5681 |
| Description | TRANS NPN 100V 1A TO39 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 4,806 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jul 24 - Jul 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JANTXV2N5681 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JANTXV2N5681 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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JANTXV2N5681 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/583 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA, 2V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
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Manufacturer ON Semiconductor Series - Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V Power - Max 225mW Frequency - Transition 125MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer ON Semiconductor Series - Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V Power - Max 625mW Frequency - Transition 125MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 260mV @ 400mA, 4A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A, 2V Power - Max 875mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 3-WDFN Exposed Pad Supplier Device Package 3-WDFN (2x2) |
