KSC2310OTA
For Reference Only
| Part Number | KSC2310OTA |
| PNEDA Part # | KSC2310OTA |
| Description | TRANS NPN 150V 0.05A TO-92L |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,688 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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KSC2310OTA Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | KSC2310OTA |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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KSC2310OTA Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Power - Max | 800mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Supplier Device Package | TO-92-3 |
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Manufacturer Microsemi Corporation Series - Transistor Type PNP Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) 50nA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Surface Mount Package / Case 4-SMD, No Lead Supplier Device Package 4-SMD |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V Power - Max 1W Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 50mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA, 2V Power - Max 250mW Frequency - Transition 450MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 3-XFDFN Supplier Device Package DFN1006B-3 |
Manufacturer Bourns Inc. Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 12A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A Current - Collector Cutoff (Max) 2mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V Power - Max 3.5W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-218-3 Supplier Device Package SOT-93 |
