KSD560RTU
For Reference Only
| Part Number | KSD560RTU |
| PNEDA Part # | KSD560RTU |
| Description | TRANS NPN DARL 100V 5A TO-220 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,168 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 13 - May 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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KSD560RTU Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | KSD560RTU |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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KSD560RTU Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 5A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 2V |
| Power - Max | 1.5W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 6V Power - Max 100mW Frequency - Transition 80MHz Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package USM |
Manufacturer Taiwan Semiconductor Corporation Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 65V Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V Power - Max 200mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
