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KSH112GTM_SB82051

KSH112GTM_SB82051

For Reference Only

Part Number KSH112GTM_SB82051
PNEDA Part # KSH112GTM_SB82051
Description TRANS NPN DARL 100V 2A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,546
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

KSH112GTM_SB82051 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberKSH112GTM_SB82051
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
KSH112GTM_SB82051, KSH112GTM_SB82051 Datasheet (Total Pages: 8, Size: 175.04 KB)
PDFKSH112GTM_SB82051 Datasheet Cover
KSH112GTM_SB82051 Datasheet Page 2 KSH112GTM_SB82051 Datasheet Page 3 KSH112GTM_SB82051 Datasheet Page 4 KSH112GTM_SB82051 Datasheet Page 5 KSH112GTM_SB82051 Datasheet Page 6 KSH112GTM_SB82051 Datasheet Page 7 KSH112GTM_SB82051 Datasheet Page 8

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KSH112GTM_SB82051 Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75W
Frequency - Transition25MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak

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Vce Saturation (Max) @ Ib, Ic

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