LSM835GE3/TR13
For Reference Only
| Part Number | LSM835GE3/TR13 |
| PNEDA Part # | LSM835GE3-TR13 |
| Description | DIODE SCHOTTKY 35V 8A DO215AB |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,488 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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LSM835GE3/TR13 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | LSM835GE3/TR13 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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LSM835GE3/TR13 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 35V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 520mV @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 2mA @ 35V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-215AB, SMC Gull Wing |
| Supplier Device Package | DO-215AB |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 16A Voltage - Forward (Vf) (Max) @ If 750mV @ 16A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 830mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50µA @ 100V Capacitance @ Vr, F 150pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AD Supplier Device Package MicroSMP (DO-219AD) Operating Temperature - Junction -40°C ~ 175°C |
