M58LT128KSB7ZA6E
For Reference Only
| Part Number | M58LT128KSB7ZA6E |
| PNEDA Part # | M58LT128KSB7ZA6E |
| Description | IC FLASH 128M PARALLEL 64TBGA |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 3,508 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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M58LT128KSB7ZA6E Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | M58LT128KSB7ZA6E |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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M58LT128KSB7ZA6E Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 52MHz |
| Write Cycle Time - Word, Page | 70ns |
| Access Time | 70ns |
| Voltage - Supply | 1.7V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-TBGA |
| Supplier Device Package | 64-TBGA (10x13) |
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Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, QDR II Memory Size 18Mb (512K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.7V ~ 1.9V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 165-LBGA Supplier Device Package 165-FBGA (13x15) |
