MB85R256GPF-G-BND-ERE1
For Reference Only
| Part Number | MB85R256GPF-G-BND-ERE1 |
| PNEDA Part # | MB85R256GPF-G-BND-ERE1 |
| Description | IC FRAM 256K PARALLEL 28SOP |
| Manufacturer | Fujitsu Electronics |
| Unit Price | Request a Quote |
| In Stock | 6,696 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MB85R256GPF-G-BND-ERE1 Resources
| Brand | Fujitsu Electronics |
| ECAD Module |
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| Mfr. Part Number | MB85R256GPF-G-BND-ERE1 |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MB85R256GPF-G-BND-ERE1 Specifications
| Manufacturer | Fujitsu Electronics America, Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 150ns |
| Access Time | 150ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 256Kb (32K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 55ns Access Time 55ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -55°C ~ 125°C (TA) Mounting Type Through Hole Package / Case 28-CDIP (0.600", 15.24mm) Supplier Device Package 28-CerDip |
