MBR6080PTE3/TU
For Reference Only
| Part Number | MBR6080PTE3/TU | ||||||||||||||||||
| PNEDA Part # | MBR6080PTE3-TU | ||||||||||||||||||
| Description | DIODE SCHOTTKY 60A 80V TO-247AD | ||||||||||||||||||
| Manufacturer | Microsemi | ||||||||||||||||||
| Unit Price |
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| In Stock | 5,951 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Jul 21 - Jul 26 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBR6080PTE3/TU Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MBR6080PTE3/TU |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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- Orders cannot be canceled after shipping the packages.
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MBR6080PTE3/TU Specifications
| Manufacturer | Microsemi Corporation |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer Central Semiconductor Corp Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 1µA @ 400V Capacitance @ Vr, F 10pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package SMB Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Comchip Technology Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1V @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 600V Capacitance @ Vr, F 14pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case 2-SMD, No Lead Supplier Device Package 2114/DO-214AA Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP®, TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) 4.8A (DC) Voltage - Forward (Vf) (Max) @ If 400mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 45V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 100A Voltage - Forward (Vf) (Max) @ If 1.5V @ 100A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 24mA @ 400V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-205AA, DO-8, Stud Supplier Device Package DO-205AA (DO-8) Operating Temperature - Junction -40°C ~ 200°C |
