MBRB25H35CTHE3/81
For Reference Only
| Part Number | MBRB25H35CTHE3/81 |
| PNEDA Part # | MBRB25H35CTHE3-81 |
| Description | DIODE ARRAY SCHOTTKY 35V TO263AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 4,680 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRB25H35CTHE3/81 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | MBRB25H35CTHE3/81 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MBRB25H35CTHE3/81 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 35V |
| Current - Average Rectified (Io) (per Diode) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 640mV @ 15A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 100µA @ 35V |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB |
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Manufacturer Global Power Technologies Group Series Amp+™ Diode Configuration 1 Pair Common Cathode Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) 65A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 20A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 40µA @ 1200V Operating Temperature - Junction -55°C ~ 175°C Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
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