MBRS360BT3G
For Reference Only
| Part Number | MBRS360BT3G |
| PNEDA Part # | MBRS360BT3G |
| Description | DIODE SCHOTTKY 60V 3A SMB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 221,736 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRS360BT3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MBRS360BT3G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Notes
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MBRS360BT3G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 630mV @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 30µA @ 60V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | SMB |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 570mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 35V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263 (D2Pak) Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 500mA Voltage - Forward (Vf) (Max) @ If 1.3V @ 500mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 500ns Current - Reverse Leakage @ Vr 5µA @ 1000V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
