MBRS410ET3G
For Reference Only
| Part Number | MBRS410ET3G |
| PNEDA Part # | MBRS410ET3G |
| Description | DIODE SCHOTTKY 10V 4A SMC |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,382 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRS410ET3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MBRS410ET3G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MBRS410ET3G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 10V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 500mV @ 4A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 150µA @ 10V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | SMC |
| Operating Temperature - Junction | -65°C ~ 150°C |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 5µA @ 50V Capacitance @ Vr, F 9pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer IXYS Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 950mV @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 900µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) 6A Voltage - Forward (Vf) (Max) @ If 600mV @ 6A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 800µA @ 35V Capacitance @ Vr, F 400pF @ 5V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263 (D2Pak) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Sanken Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 3V @ 800mA Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.5µs Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case Axial Supplier Device Package - Operating Temperature - Junction -40°C ~ 150°C |
