MBRT20030
For Reference Only
| Part Number | MBRT20030 |
| PNEDA Part # | MBRT20030 |
| Description | DIODE MODULE 30V 200A 3TOWER |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,402 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRT20030 Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MBRT20030 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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- Orders cannot be canceled after shipping the packages.
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MBRT20030 Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Current - Average Rectified (Io) (per Diode) | 200A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 750mV @ 100A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 1mA @ 20V |
| Operating Temperature - Junction | - |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) (per Diode) 400A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 125A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 400A (DC) Voltage - Forward (Vf) (Max) @ If 880mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer Vishay Semiconductor Diodes Division Series TMBS® Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 790mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 800µA @ 100V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Configuration 1 Pair Series Connection Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) 270A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50mA @ 1200V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case 3-MAGN-A-PAK™ Supplier Device Package MAGN-A-PAK® |
Manufacturer Infineon Technologies Series - Diode Configuration 2 Pair Series Connection Diode Type Standard Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) (per Diode) 200mA (DC) Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 150nA @ 70V Operating Temperature - Junction 150°C (Max) Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
