MBT35200MT1G
For Reference Only
| Part Number | MBT35200MT1G |
| PNEDA Part # | MBT35200MT1G |
| Description | TRANS PNP 35V 2A 6TSOP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 29,766 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBT35200MT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MBT35200MT1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
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Notes
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MBT35200MT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 35V |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V |
| Power - Max | 625mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Supplier Device Package | 6-TSOP |
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Manufacturer ON Semiconductor Series - Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
