MDS70
For Reference Only
| Part Number | MDS70 |
| PNEDA Part # | MDS70 |
| Description | RF TRANS NPN 65V 1.09GHZ 55CX |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,272 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MDS70 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MDS70 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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MDS70 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Frequency - Transition | 1.03GHz ~ 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 10.3dB ~ 11.65dB |
| Power - Max | 225W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Current - Collector (Ic) (Max) | 5A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | 55CX |
| Supplier Device Package | 55CX |
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Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition - Noise Figure (dB Typ @ f) 2dB @ 1GHz Gain 8.3dB Power - Max 2W DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 10V Current - Collector (Ic) (Max) 250mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 50V Frequency - Transition 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f) - Gain 7dB ~ 7.5dB Power - Max 19W DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) 1A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55LV Supplier Device Package 55LV |
