MIC4123YME-TR
For Reference Only
| Part Number | MIC4123YME-TR |
| PNEDA Part # | MIC4123YME-TR |
| Description | IC DRIVER MOSFET 3A DUAL 8-SOIC |
| Manufacturer | Microchip Technology |
| Unit Price | Request a Quote |
| In Stock | 19,836 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 26 - May 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MIC4123YME-TR Resources
| Brand | Microchip Technology |
| ECAD Module |
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| Mfr. Part Number | MIC4123YME-TR |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MIC4123YME-TR Specifications
| Manufacturer | Microchip Technology |
| Series | - |
| Driven Configuration | Low-Side |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel, P-Channel MOSFET |
| Voltage - Supply | 4.5V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 2.4V |
| Current - Peak Output (Source, Sink) | 3A, 3A |
| Input Type | Inverting |
| High Side Voltage - Max (Bootstrap) | - |
| Rise / Fall Time (Typ) | 11ns, 11ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package | 8-SOIC |
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Manufacturer STMicroelectronics Series - Driven Configuration High-Side Channel Type Single Number of Drivers 1 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 12V ~ 26V Logic Voltage - VIL, VIH 0.8V, 4.2V Current - Peak Output (Source, Sink) 1.5A, 2.3A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 130ns, 75ns (Max) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SO |
Manufacturer Renesas Electronics America Inc. Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 9V ~ 14V Logic Voltage - VIL, VIH 1.4V, 2.2V Current - Peak Output (Source, Sink) 2A, 2A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 114V Rise / Fall Time (Typ) 10ns, 10ns Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 9-VFDFN Exposed Pad Supplier Device Package 9-DFN-EP (3x3) |
Manufacturer Infineon Technologies Series - Driven Configuration High-Side Channel Type Single Number of Drivers 1 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 12V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.5V Current - Peak Output (Source, Sink) 290mA, 600mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 80ns, 40ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Renesas Electronics America Inc. Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 4.5V ~ 5.5V Logic Voltage - VIL, VIH 1V, 2V Current - Peak Output (Source, Sink) -, 4A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 36V Rise / Fall Time (Typ) 8ns, 8ns Operating Temperature 0°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
