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MJ11032G

MJ11032G

For Reference Only

Part Number MJ11032G
PNEDA Part # MJ11032G
Description TRANS NPN DARL 120V 50A TO3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 34,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MJ11032G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMJ11032G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
MJ11032G, MJ11032G Datasheet (Total Pages: 4, Size: 116.12 KB)
PDFMJ11030G Datasheet Cover
MJ11030G Datasheet Page 2 MJ11030G Datasheet Page 3 MJ11030G Datasheet Page 4

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MJ11032G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)50A
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Power - Max300W
Frequency - Transition-
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-3

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Current - Collector Cutoff (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Frequency - Transition

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Mounting Type

Through Hole

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TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

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