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MJD31C1G

MJD31C1G

For Reference Only

Part Number MJD31C1G
PNEDA Part # MJD31C1G
Description TRANS NPN 100V 3A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,476
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MJD31C1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMJD31C1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
MJD31C1G, MJD31C1G Datasheet (Total Pages: 12, Size: 239 KB)
PDFMJD32CRL Datasheet Cover
MJD32CRL Datasheet Page 2 MJD32CRL Datasheet Page 3 MJD32CRL Datasheet Page 4 MJD32CRL Datasheet Page 5 MJD32CRL Datasheet Page 6 MJD32CRL Datasheet Page 7 MJD32CRL Datasheet Page 8 MJD32CRL Datasheet Page 9 MJD32CRL Datasheet Page 10 MJD32CRL Datasheet Page 11

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MJD31C1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A, 4V
Power - Max1.56W
Frequency - Transition3MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

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